Optical Coatings Laboratory

QUANTUM MATERIALS LABORATORY

IMG_0284

The ALD reactor at Imer Research Group can operate at low temperatures which is quite helpful especially when dealing with some metalorganic sources. The metalorganic sources at hand are diethyl zinc, tetrakis titanium, trimethyl gallium, trimethyl aluminum, making us able to obtain thin ZnO, TiO2, Ga2O3 and Al2O3 films. The application areas of mentioned thin films are countless. Contact layers in devices such as MEMS (microelectronic mechanical systems), MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), Solar Cells, memristors; passivation layers for conducting nanofibers/tubes, even obtaining protective layers against corrosion is possible.

ALD provides a wide range of thicknesses, easily adjusted beforehand, that is, with each ALD cycle, one obtains a definite thickness and therefore number of cycles determines the overall thickness (From 10 to 200 nm). The ALD reactor we own at Imer Research Group can operate at low temperatures which is quite helpful especially when dealing with some metalorganic sources such as diethyl Zinc. The temperature range is in between 100 to 200°C. The system operates under vacuum and pressure goes down to 10-3 Torr. The coating is preferably done on Si wafer substrate (up to 4’’) with ease.